- Categories:Test Services
- Time of issue:2022-05-18 15:58:39
OBIRCH (or TIVA, OBIC, XIVA) scans the chip by controlling the focused infrared laser beam, which is coupled with a constant voltage and monitors the changes in current generated during laser scanning.
High-energy laser penetrates multilayer metal and silicon substrate, from both front side and the back side analysis can save the traditional 1-2 days of analysis time. Silicon Si and III-VI chips can be positioned to meet the customer's positioning of leakage short circuit location, transistor, capacitor, resistor short circuit, ESD, EOS short circuit positioning can be achieved.
3、Hot spot failure positioning case
ESD fail location observed using OBIRCH
PEM emission spot observed was found to be residual PolySi
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