1. Project introduction:

Dynamic Secondary Ion Mass Spectrometry (DSIMS) is a surface analysis technique widely used in the analysis of the composition of solid materials. The surface of the test sample is bombarded with a focused primary ion beam with a certain energy and incidence angle, and the chemical composition of the test sample can be obtained by collecting and analyzing the secondary ion signal generated during the bombardment. This bombardment process can be slow, so that its depth resolution can reach 1-2nA. At this stage, the quantitative analysis of DSIMS needs to be done by testing standards, but it is still the most sensitive surface analysis technology available today – different element detection limits can reach ppm-ppb.

Featuring Cameca IMS-7F auto, Sembcorp Nano is currently the world’s most advanced DSIMS test equipment, and due to its high price, few companies in the industry can procure it. The vacuum system and analytical capabilities of the equipment have been greatly improved (the vacuum value of the analysis chamber can reach 1E-10 torr, which can analyze more complex samples).

2. Application advantages:

Very low detection limits (ppm-ppb)

All elements of H-U can be detected precisely

Elemental concentration depth distribution or bulk phase concentration

Small area analysis (<30umx30um)

3. D-SIMS sample requirements

(1) Material type

-Si materials (monocrystalline, polycrystalline, solar cells)

-SiO2 materials (SOI, TFT-LCD)

-SiC material

-III-V compound semiconductor materials (GaN, GaAs, InP, etc.)

(2) Sample shape and size

-Block samples, minimum size 3mm*3mm

-The sample test surface should preferably be smooth and flat (the surface state will affect the depth resolution)

4. Application cases:

(1)Depth profile for Silicon

High accuracy and precision to be able to distinguish subtle differences in ion implantation. It can be used for ion implantation equipment commissioning and process monitoring.

(2)Depth profile for Silicon

Due to the low mass resolution of the mass filter of the injector, mass contamination can occur if the injector has contaminants with a mass close to or the same as the dopant.

(3)Depth profile for Solar Cell

P doping monitoring in solar cells, good test repeatability, and accurate reaction to the diffusion curve of impurities.

(4)Depth profile for GaN LED

Good depth resolution. It can be applied to MQW adjustment and monitoring of doped elements such as Mg and Si. The low detection limit facilitates the analysis of impurity elements such as C, H, O, etc.

(5)Depth profile for TFT-LCD

7F-auto can be well used for elemental analysis of insulating materials such as glass. H concentration detection.

(6)Depth profile for TFT-LCD

P Injection doping

Na K contamination detection (with TOF-SIMS)