SEM
1. Project introduction
Wintech Nano SEM projects can be divided into intermediate and advanced hands-on observations, which we will cover below:
1. Intermediate SEM:
(1) Project introduction:
The Hitachi SU5000 conventional scanning electron microscope creates a topography image of the surface by scanning the sample and collecting secondary electrons. Non-conductive samples can also be used with Hitachi SU5000, which introduces positively charged molecules into the surface attachment of the sample by adjusting the vacuum level of the SEM cavity. These molecules interact with the charging electrons and neutralize them, eliminating this charging effect. However, air molecules introduced in the vacuum chamber interact with primary electrons, reducing the quality of the image.
(2) Application advantages:
Hitachi SU5000 has Schottky thermal field resolution, 3.0nm@1KV, magnification 10x~80kx, variable vacuum chamber 300pa, sample stage length, width and height 100*50*65mm, SE+BSE multi-probe use at the same time, adjust vacuum without gold sputtering, grinding IonMill preparation can be directly SEM, can do sample imaging photos, can not be gold plated samples can be directly SEM.
2. Advanced SEM:
(1) Project introduction:
The Hitachi SU8230 is a cold-field emission scanning electron microscope (FE-SEM) with ultra-high resolution that creates a topography image of a display surface by scanning a sample and using a special detector mobile phone to emit secondary electrons.
(2) Application advantages:
Compared with the previous model, The resolution can reach 0.6nm，the probe current of SU8230 has been greatly improved, the current stability has been greatly enhanced, its stable beam can meet the analysis needs for a long time, and the extremely low landing voltage minimizes the damage of the electron beam to the sample surface, and realizes the continuous long-term high resolution and observation analysis capabilities. The cold field reduces electron beam carbon deposition pollution and has more surface topography information than TEM. Suitable for observing a single transistor, FA analysis is standard.
